(Hong Kong)
Product Summary
TLP521-1GB is a GaAs IRED and photo-transistor. The TLP521-1GB consists of a photo-transistor optically coupled to a gallium arsenide infraded emitting diode.
Parametrics
TLP521-1GB absolute maximum ratings: (1) forward current IF: 70mA; (2) Forward current debrating: -0.93 mA/°C (Ta≥50°C) ; (3) Pulse forward current, IFP: 1A (100μ pulse, 100pps) ; (4) Reverse voltage VR: 5V; (5) Junction Temperature Tj: 125°C: (6) Collector-emitter voltage VCEO: 55V; (7) Emitter-Collector Voltage VECO: 7V; (8) Operating temperature range Tstg: -55 to 125°C; (9) Operating temperature range Topr: -55 to 100°C; (10) Junction temperature: 125°C.
Features
TLP521-1GB absolute maximum ratings: (1) collector-emitter voltage: 55V (min) ; (2) current transfer ratio: 50% (min); (3) Isolation voltage: 2500Vrms (min) ; (4) UL recognized.
Diagrams
| Image | Part No | Mfg | Description |  |
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 TLP521-1GB |
Other |
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Data Sheet |
Negotiable |
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Quantity | ||||||||||||
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PHOTOCOUPLER DUAL TRANS-OUT 8DIP |
Data Sheet |
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Data Sheet |
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Data Sheet |
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TLP504A(GB) |
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PHOTOCOUPLER DUAL TRANS-OUT 8DIP |
Data Sheet |
Negotiable |
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Toshiba |
Transistor Output Optocouplers 55Vceo 2500Vrms standard |
Data Sheet |
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TLP504A-2 |
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PHOTOCPLR QUAD TRANS-OUT 16-DIP |
Data Sheet |
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