Product Summary
The BCP53T1G is a PNP Silicon Epitaxial transistor. The BCP53T1G is designed for use in audio amplifier applications. The BCP53T1G is housed in the SOT-223 package which is designed for medium power surface mount applications.
Parametrics
BCP53T1G absolute maximum ratings: (1) Collector-Emitter Voltage VCEO: -80Vdc; (2) Collector-Base Voltage VCBO: -100Vdc; (3) Emitter-Base Voltage VEBO: -5.0Vdc; (4) Collector Current Ic: 1.5Adc; (5) Total Power Dissipation @ TA=25°C, Derate above 25°C PD: 1.5W/°C; (6) Operating and Storage Temperature Range, TJ, Tstg: -65 to 150°C.
Features
BCP53T1G features: (1) High Current: 1.5 Amps; (2) NPN Complement is BCP56; (3) The SOT-223 Package can be soldered using wave or reflow. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die; (4) Available in 12 mm Tape and Reel.
Diagrams
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![]() BCP53T1G |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 1.5A 100V PNP |
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Image | Part No | Mfg | Description | ![]() |
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![]() BCP51 |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
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![]() BCP51 T/R |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
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![]() Negotiable |
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![]() BCP51,115 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE-7 |
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![]() BCP51_Q |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) SOT-223 PNP GP AMP |
![]() Data Sheet |
![]() Negotiable |
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![]() BCP51-10 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() BCP51-10 /T3 |
![]() NXP Semiconductors |
![]() Transistors Bipolar (BJT) TRANS MED PWR TAPE13 |
![]() Data Sheet |
![]() Negotiable |
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