(Hong Kong)
Product Summary
The BU808DFI is an NPN transistor, which is in monolithic darlington configuration. The BU808DFI is cost-effective high performance. TV is one kinds of applications of the BU808DFI.
Parametrics
BU808DFI absolute maximum ratings: (1) Collector-base voltage (IE=0) VCBO: 1400V; (2) Collector-base voltage (IB=0) VCEO: 700V; (3) Emitter-base Voltage (Ic=0) , VEBO: 5V; (4) Collector current Ic: 8A; (5) Collector peak current (tp＜5ms) ICM: 10A; (6) Base current: 3A; (7) Total dissipation at Tc=25°C Ptot: 52W; (8) Storage temperature Tstg: -65 to 150°C; (9) Max. Operating Junction temperature: 150°C.
Features
BU808DFI features: (1) NON monolithic darlington with intergrated free-wheeling diode; (2) high voltage capability; (3) high DC current gain (Typ. 150) ; (4) low base-driver requirements.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 BU808DFI |
STMicroelectronics |
Transistors Darlington NPN Sw Darlington |
Data Sheet |
Negotiable |
|
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||
 |
BU806 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
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|
BU807 |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
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 |
BU807FI |
Other |
|
Data Sheet |
Negotiable |
|
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|
BU807TU |
Fairchild Semiconductor |
Transistors Darlington NPN Epitaxial Sil Darl |
Data Sheet |
Negotiable |
|
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|
BU808 |
Other |
|
Data Sheet |
Negotiable |
|
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|
BU808-3PN |
Other |
|
Data Sheet |
Negotiable |
|
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