(Hong Kong)
Product Summary
IRL2910PBF is a power mosfet. This benefit of the IRL2910PBF, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
Parametrics
IRL2910PBF absolute maximum ratings: (1) Continuous Drain Current, VGS@10V, ID@Tc=25°C: 55A; (2) Continuous Drain Current, VGS@10V, ID@Tc=100°C: 39A; (3) Pulsed Drain Current, IDM: 190W, Linear Derating Factor: 1.3W/°C; (4) Gate-to-Source Voltage: ±16V; (5) Single Pulse Avalanche energy EAS: 520mJ; (6) Avalanche Current IAR: 29A; (7) Repetitve Avalance Energy: 20mJ; (8) Peak Diode Recovery dv/dt: 5.0V/ns; (9) Operating Junction and storage temperature range: -55 to +175°C.
Features
IRL2910PBF features: (1) Logic-level gate drive; (2) advanced process technology; (3) ultra low on-resistance; (4) dynamic dv/dt ratings; (5) 175°C operating temperature; (6) fast switching; (7) fully avanche rated.
Diagrams
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 IRL2910PBF |
International Rectifier |
MOSFET MOSFT 48A 93.3nC 260mOhm LogLvAB |
Data Sheet |
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Data Sheet |
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Data Sheet |
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MOSFET N-CH 30V 116A D2PAK |
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IRL2203NSPBF |
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MOSFET |
Data Sheet |
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