Product Summary

The SPW20N60S5 is a cool MOS power transistor.

Parametrics

SPW20N60S5 absolute maximum ratings: (1) Continuous drain current ID: 20A (Tc=25°C) , 13A ( Tc=100°C) ,Pulsed drain current, tp limited by Tjmax, ID puls: 40mJ; (3) Avalanche energy, single pulse ID=10A, VDD=50V, EAS: 690mJ; (4) Avalanche energy, repetitive TAR limited by Tjmax IAR: 20A; (5) Gate source voltage VGS: ±20V; (6) Gate source voltage AC (f >1Hz) , VGS: ±30V; (7) Power dissipation, TC=25°C, Ptot: 208W; (8) Operating and storage temperature Tj, Tstg: -55 to +150°C.

Features

SPW20N60S5 features: (1) New revolutionary high voltage technology; (2) Ultra low gate charge; (3) Periodic avalanche rated; (4) Extreme dv/dt rated; (5) Ultra low effective capacitances; (6) Improved transconductance.

Diagrams

SPW20N60S5 Circuit

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
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SPW20N60S5

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Data Sheet

0-1: $2.02
1-10: $1.96
10-100: $1.91
100-500: $1.81
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Quantity
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Data Sheet

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Data Sheet

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