Product Summary
The SPW20N60S5 is a cool MOS power transistor.
Parametrics
SPW20N60S5 absolute maximum ratings: (1) Continuous drain current ID: 20A (Tc=25°C) , 13A ( Tc=100°C) ,Pulsed drain current, tp limited by Tjmax, ID puls: 40mJ; (3) Avalanche energy, single pulse ID=10A, VDD=50V, EAS: 690mJ; (4) Avalanche energy, repetitive TAR limited by Tjmax IAR: 20A; (5) Gate source voltage VGS: ±20V; (6) Gate source voltage AC (f >1Hz) , VGS: ±30V; (7) Power dissipation, TC=25°C, Ptot: 208W; (8) Operating and storage temperature Tj, Tstg: -55 to +150°C.
Features
SPW20N60S5 features: (1) New revolutionary high voltage technology; (2) Ultra low gate charge; (3) Periodic avalanche rated; (4) Extreme dv/dt rated; (5) Ultra low effective capacitances; (6) Improved transconductance.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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SPW20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
Data Sheet |
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Quantity | |||||||||||||
SPW20N60C2 |
Infineon Technologies |
MOSFET N-CH 600V 20A TO-247 |
Data Sheet |
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MOSFET COOL MOS N-CH 650V 20.7A |
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Data Sheet |
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SPW20N60S5 |
Infineon Technologies |
MOSFET COOL MOS N-CH 600V 20A |
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